R+O · FETs & Power MOSFETs · MPN HD506N032SG
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 105W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 2.6mΩ@10V |
| Input Capacitance(Ciss) | 5.045nF@30V |
| Type | N-Channel |
60V 100A 1.7V 105W 2.6mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS