R+O HD504P190S

R+O · FETs & Power MOSFETs · MPN HD504P190S

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Specifications

Gate Charge(Qg)50.8nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)254pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation41W
RDS(on)9mΩ@10V;13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)220pF
Number1 P-Channel
Input Capacitance(Ciss)2.603nF
TypeP-Channel

Technical details

P-Channel 40V 35A 41W Surface Mount PDFN-8L(5x6)

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