R+O HD504N120S

R+O · FETs & Power MOSFETs · MPN HD504N120S

No reviews yet — be the first to review R+O HD504N120S.

Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation35W
RDS(on)8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)158pF
Number1 N-channel
Input Capacitance(Ciss)2.05nF

Technical details

40V 50A 1.5V 35W 8mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs