R+O HD504N085S

R+O · FETs & Power MOSFETs · MPN HD504N085S

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation46W
RDS(on)6.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)165pF@20V
Input Capacitance(Ciss)2.45nF@20V
TypeN-Channel

Technical details

40V 60A 1.5V 46W 6.3mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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