R+O · FETs & Power MOSFETs · MPN HD504N085S
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 46W |
| RDS(on) | 6.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF@20V |
| Input Capacitance(Ciss) | 2.45nF@20V |
| Type | N-Channel |
40V 60A 1.5V 46W 6.3mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS