R+O · FETs & Power MOSFETs · MPN HD504N060SG
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 485pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 65W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 910pF |
40V 65A 1.5V 65W 6mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS