R+O HD504N015SG

R+O · FETs & Power MOSFETs · MPN HD504N015SG

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation130W
RDS(on)1.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)219pF
Input Capacitance(Ciss)6.183nF@20V
TypeN-Channel

Technical details

40V 120A 3V 130W 1.2mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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