R+O HD503P130S

R+O · FETs & Power MOSFETs · MPN HD503P130S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)223pF@15V
RDS(on)11.5mΩ@10V
Input Capacitance(Ciss)1.511nF@15V
TypeP-Channel

Technical details

30V 50A 1.6V 31W 11.5mΩ@10V P-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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