R+O HD503N220D

R+O · FETs & Power MOSFETs · MPN HD503N220D

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21.6nC@10V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation25W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)137pF
Number2 N-Channel
Input Capacitance(Ciss)937pF

Technical details

30V 35A 1.5V 25W 13mΩ@10V 2 N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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