R+O · FETs & Power MOSFETs · MPN HD503N110D
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.581nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 216pF |
| RDS(on) | 5mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.382nF |
30V 80A 1.7V 36W 5mΩ@10V 2 N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS