R+O HD503N080S

R+O · FETs & Power MOSFETs · MPN HD503N080S

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)163pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation41.6W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)6.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.014nF
TypeN-Channel

Technical details

N-Channel 30V 50A 41.6W Surface Mount PDFN-8L(5x6)

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