R+O HD503N050S

R+O · FETs & Power MOSFETs · MPN HD503N050S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation48W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)305pF
Number1 N-channel
Input Capacitance(Ciss)2.65nF

Technical details

30V 85A 1.5V 48W 5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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