R+O HD503N030S

R+O · FETs & Power MOSFETs · MPN HD503N030S

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation60W
RDS(on)2.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)433pF
Number1 N-channel
Input Capacitance(Ciss)3.55nF

Technical details

30V 105A 1.7V 60W 2.2mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

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