R+O · FETs & Power MOSFETs · MPN HD503N022S
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| Gate Charge(Qg) | 83nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 85W |
| Reverse Transfer Capacitance (Crss@Vds) | 700pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.898nF |
30V 120A 1.8V 85W 1.5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS