R+O HD503N020SG

R+O · FETs & Power MOSFETs · MPN HD503N020SG

No reviews yet — be the first to review R+O HD503N020SG.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)95nC@10V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)168pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.135nF

Technical details

30V 120A 1.5V 105W 1.5mΩ@10V 1 N-channel PDFN-8(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs