R+O HD306P450S

R+O · FETs & Power MOSFETs · MPN HD306P450S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)62.3nC@10V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)29mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.285nF

Technical details

60V 20A 2V 24W 29mΩ@10V 1 P-Channel PDFN-8(3x3) Single FETs, MOSFETs RoHS

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