R+O HD303P180S

R+O · FETs & Power MOSFETs · MPN HD303P180S

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Specifications

Gate Charge(Qg)74.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)370pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.655nF

Technical details

30V 35A 1.5V 30W 15mΩ@10V 1 P-Channel PDFN-8(3x3) Single FETs, MOSFETs RoHS

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