R+O · FETs & Power MOSFETs · MPN HD303N110DG
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 8.5mΩ@10V |
| Input Capacitance(Ciss) | 658pF@15V |
| Type | N-Channel |
30V 18A 1.7V 18W 8.5mΩ@10V N-Channel PDFN-8(3x3) Single FETs, MOSFETs RoHS