R+O · FETs & Power MOSFETs · MPN HD303N080SG
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 21W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF |
| Input Capacitance(Ciss) | 695pF@15V |
| Type | N-Channel |
30V 28A 1.7V 21W 6mΩ@10V N-Channel PDFN-8(3x3) Single FETs, MOSFETs RoHS