R+O · FETs & Power MOSFETs · MPN HB65N6H0SJ
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| Gate Charge(Qg) | 19.2nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.1V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 651pF |
| Type | N-Channel |
650V 8A 4.1V 78W 600mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS