R+O · FETs & Power MOSFETs · MPN HB10N200S
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| Drain to Source Voltage | 100V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 12.7nC@10V |
| Current - Continuous Drain(Id) | 45A |
| Output Capacitance(Coss) | 540pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.02nF |
N-Channel 100V 45A 52W Surface Mount TO-252