R+O · FETs & Power MOSFETs · MPN HB10N085SG
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 6.7mΩ@10V |
| Input Capacitance(Ciss) | 2.031nF@50V |
| Type | N-Channel |
100V 80A 1.7V 100W 6.7mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS