R+O · FETs & Power MOSFETs · MPN HB06P1H0S
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.09nF |
60V 14A 1.5V 32W 80mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS