R+O · FETs & Power MOSFETs · MPN HB06N750S
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 8.7nC@10V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 16.6W |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 384pF |
60V 12A 2V 16.6W 75mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS