R+O HB06N330S

R+O · FETs & Power MOSFETs · MPN HB06N330S

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Specifications

Gate Charge(Qg)23.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.385nF

Technical details

60V 30A 1.6V 45W 33mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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