R+O · FETs & Power MOSFETs · MPN HB06N330S
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| Gate Charge(Qg) | 23.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 88pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.385nF |
60V 30A 1.6V 45W 33mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS