R+O · FETs & Power MOSFETs · MPN HB06N100S
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| Gate Charge(Qg) | 77nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 198pF@25V |
| RDS(on) | 10mΩ@10V |
| Input Capacitance(Ciss) | 3.018nF@25V |
| Type | N-Channel |
60V 60A 1.5V 70W 10mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS