R+O · FETs & Power MOSFETs · MPN HB06N040SG
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.4nF |
60V 140A 1.7V 115W 3.5mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS