R+O HB04P130S

R+O · FETs & Power MOSFETs · MPN HB04P130S

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation73W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 P-Channel
Input Capacitance(Ciss)3.5nF

Technical details

40V 40A 1.5V 73W 13mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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