R+O · FETs & Power MOSFETs · MPN HB04N150S
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| Gate Charge(Qg) | 22.9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 109pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.013nF |
40V 40A 1.5V 35W 14mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS