R+O · FETs & Power MOSFETs · MPN HB04N090S
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.53nF |
40V 70A 1.5V 60W 9mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS