R+O · FETs & Power MOSFETs · MPN HB04N060S
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| Gate Charge(Qg) | 72nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF@20V |
| RDS(on) | 4.1mΩ@10V |
| Input Capacitance(Ciss) | 3.787nF@20V |
| Type | N-Channel |
40V 85A 1.6V 80W 4.1mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS