R+O · FETs & Power MOSFETs · MPN HB04N040S
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| Gate Charge(Qg) | 120.1nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 411pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.72nF |
40V 100A 1.7V 56.8W 4mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS