R+O HB03P250S

R+O · FETs & Power MOSFETs · MPN HB03P250S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)43.8nC@10V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
RDS(on)15mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)196pF
Number1 P-Channel
Input Capacitance(Ciss)1.92nF
TypeP-Channel

Technical details

P-Channel 30V 40A 50W Surface Mount TO-252

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