R+O HB03N080S

R+O · FETs & Power MOSFETs · MPN HB03N080S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30.5nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation25W
RDS(on)5.5mΩ@10V;7.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)130pF
Number1 N-channel
Input Capacitance(Ciss)1.665nF
TypeN-Channel

Technical details

N-Channel 30V 50A 25W Surface Mount TO-252

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