R+O HB03N070S

R+O · FETs & Power MOSFETs · MPN HB03N070S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)33.1nC@10V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation36W
RDS(on)6.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)163pF
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

30V 70A 1.5V 36W 6.3mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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