R+O HB03N060S

R+O · FETs & Power MOSFETs · MPN HB03N060S

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage30V
Configuration-
Output Capacitance(Coss)-
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)167pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

N-Channel 30V 70A 44W Surface Mount TO-252

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