R+O · FETs & Power MOSFETs · MPN HB03N056S
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 38nC@10V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 43W |
| RDS(on) | 5.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
30V 80A 1.8V 43W 5.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS