R+O · FETs & Power MOSFETs · MPN HB03N040S
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 108A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.055nF |
30V 108A 1.5V 54W 4mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS