R+O · FETs & Power MOSFETs · MPN HB02N080S
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 17nC@4.5V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 32W |
| RDS(on) | 8mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.615nF |
20V 50A 700mV 32W 8mΩ@4.5V 1 N-channel TO-252 Single FETs, MOSFETs RoHS