R+O · FETs & Power MOSFETs · MPN HB02N070S
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 27nC@4.5V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 295pF |
| RDS(on) | 7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
20V 60A 750mV 37W 7mΩ@4.5V 1 N-channel TO-252 Single FETs, MOSFETs RoHS