R+O BSS84

R+O · FETs & Power MOSFETs · MPN BSS84

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Specifications

Gate Charge(Qg)1.77nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.9pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation680mW
RDS(on)3.3Ω@10V;3.5Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)2.8pF
Number1 P-Channel
Input Capacitance(Ciss)43pF
TypeP-Channel

Technical details

P-Channel 60V 170mA 680mW Surface Mount SOT-23

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