R+O BSS123K

R+O · FETs & Power MOSFETs · MPN BSS123K

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Specifications

Gate Charge(Qg)1.3nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)5.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF

Technical details

100V 200mA 1.5V 350mW 5.5Ω@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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