R+O BSS123

R+O · FETs & Power MOSFETs · MPN BSS123

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Specifications

Gate Charge(Qg)1.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)3.5pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation680mW
RDS(on)6Ω@10V;10Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)22pF
TypeN-Channel

Technical details

N-Channel 100V 170mA 680mW Surface Mount SOT-23

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