R+O 2SD965A

R+O · Transistors (BJTs) · MPN 2SD965A

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain800
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))1V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 30V 5A 150MHz 750mW Surface Mount SOT-89

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