R+O 2SD1664

R+O · Transistors (BJTs) · MPN 2SD1664

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain390
Pd - Power Dissipation0.5mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))400mV
Operating Temperature-55℃~+155℃

Technical details

Bipolar (BJT) Transistor NPN 32V 1A 120MHz 0.5mW Surface Mount SOT-89

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