R+O 2N7002W

R+O · FETs & Power MOSFETs · MPN 2N7002W

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)-
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 60V 115mA 200mW Surface Mount SOT-323

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