R+O 2N7002K

R+O · FETs & Power MOSFETs · MPN 2N7002K

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)-
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)900mΩ@10V;1.1Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)40pF
TypeN-Channel

Technical details

N-Channel 60V 340mA 350mW Surface Mount SOT-23

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