PUOLOP PTP4N65

PUOLOP · FETs & Power MOSFETs · MPN PTP4N65

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Specifications

Gate Charge(Qg)10.2nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)4A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation109W
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
TypeN-Channel

Technical details

N-Channel 650V 4A 109W Through Hole TO-220

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