PJSEMI · FETs & Power MOSFETs · MPN PJMG60P60TE
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 20mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.634nF |
| Type | P-Channel |
P-Channel 60V 60A 100W Surface Mount TO-252