PJSEMI PJMG40P60TE

PJSEMI · FETs & Power MOSFETs · MPN PJMG40P60TE

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation65W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 P-Channel
Input Capacitance(Ciss)1.505nF
TypeP-Channel

Technical details

P-Channel 60V 40A 65W Surface Mount TO-252

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