PJSEMI · FETs & Power MOSFETs · MPN PJMG35N60DL
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13.9nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 256pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
60V 35A 2.5V 38W 18mΩ@10V 1 N-channel N-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS